AO4403 30v p-channel mosfet general description p roduct summary v ds i d (at v gs =-10v) - 6a r ds(on) (at v gs =-10v) < 48m w r ds(on) (at v gs =-4.5v) < 57m w r ds(on) (at v gs =-2.5v) < 80m w 100% uis tested 100% r g tested symbol v ds drain-source voltage -30 the AO4403 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate v oltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. v units parameter absolute maximum ratings t a =25c unless otherwise noted -30v maximum g d s soic-8 t op view bottom view d d d d s s s g v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q j l w m aximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 r q j a 31 a m aximum junction-to-ambient a c/w t a =25c t a =70c p ower dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain c urrent v t a =70c a i d -30 - 6 -5 mj avalanche current c 16 drain-source voltage -30 v 59 40 12 gate-source voltage 3.1 2 18 t a =25c c thermal characteristics junction and storage temperature range -55 to 150 units parameter typ max rev 7: mar. 2011 www.aosmd.com page 1 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4403 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0 .5 -0.9 -1.3 v i d(on) -30 a 4 0 48 t j =125c 6 0 72 45 57 m w 60 80 m w g fs 19 s v sd -0.7 -1 v i s -3.5 a c iss 645 780 pf c oss 80 p f c rss 55 p f r g 4 7.8 12 w q g (4.5v) 7 nc q gs 1.5 n c q gd 2.5 n c t d(on) 6.5 n s t r 3.5 n s t d(off) 41 ns switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-4.5v, v ds =-15v, i d =-6a g ate source charge i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v el ectrical characteristics (t j =25c unless otherwise noted) st atic parameters parameter conditions forward transconductance diode forward voltage r ds(on) static drain-source on-resistance d rain-source breakdown voltage on state drain current v gs =-2.5v, i d =-2a v gs =-10v, i d =-6a i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 12v z ero gate voltage drain current gate-body leakage current turn-on rise time turn-off delaytime m w i s =-1a,v gs =0v v ds =-5v, i d =-6a v gs =-4.5v, i d =-4a m aximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =-10v, v ds =-15v, r l =2.5 w , r gen =6 w gate drain charge total gate charge reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz t d(off) 41 ns t f 9 n s t rr 11 n s q rr 3.5 n c this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time t urn-off fall time body diode reverse recovery charge i f =-6a, di/dt=100a/ m s turn-off delaytime i f =-6a, di/dt=100a/ m s r gen =6 w a. the value of r q j a is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 7: mar. 2011 www.aosmd.com page 2 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4403 typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 1 0 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 3 0 50 70 90 0 2 4 6 8 10 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1 .2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =-2.5v i d =-2a v g s =-10v i d =-6a v g s =-4.5v i d =-4a 25 c 125 c v ds =-5v v g s =-4.5v v g s =-10v 0 5 1 0 15 20 25 30 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-2v -2.5v -4.5v -3v -1 0v v g s =-2.5v 40 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 4 0 60 80 100 0 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d = -6a 25 c 125 c rev 7: mar. 2011 www.aosmd.com page 3 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4403 typical electrical and thermal characteristics 1 1 0 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j( max) =150 c t a =25 c 0 1 2 3 4 5 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2 00 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =-15v i d =-6a 0.0 0 .1 1.0 10.0 100.0 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased 10 m s 10s 1ms dc r d s(on) limited t j( max) =150 c t a =25 c 100 m s 1s 10ms 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q j a n ormalized transient t h ermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) figure 10: single pulse power rating junction - to - ambient (note f) figure 9: maximum forward biased safe operating area (note f) single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja = 75 c/w t on t p d rev 7: mar. 2011 www.aosmd.com page 4 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4403 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar a r bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d (off) f off d (on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 7: mar. 2011 www.aosmd.com page 5 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
|
